Three-dimensional addressing for erasable programmable read only memory

ABSTRACT

Three-dimensional addressing for erasable programmable read only memory (EPROM) can include a number of EPROM banks, a number of shift registers, a row select data signal, a column select data signal, and a bank select data signal.

BACKGROUND

Memory is an important element to store information in a system. Memorycan be achieved by creating and maintaining a number of differentstates, such as “0” and “1.” Erasable programmable read only memory(EPROM) is one type of non-volatile memory comprising an array ofindividually programmed floating-gate transistors which store memoryunits (e.g., bits) coded by the conductivity of the storage transistors.

Integrated print heads (IPHs) can include memory. IPH memory can be usedto store information like Pen ID, Unique ID, Analog Serial Number (ASN),security information, and other IPH feature enhancement information.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram of an example of a print head memory deviceaccording to the present disclosure.

FIG. 2A is a table illustrating an example of the three-dimensionaladdressing scheme for EPROM according to the present disclosure.

FIG. 2B is a table illustrating an example of the three-dimensionalparallel addressing scheme for EPROM according to the present disclosure

FIG. 3 is a flow chart of an example of a method for three-dimensionaladdressing of an EPROM memory unit of an integrated print head.

DETAILED DESCRIPTION

Integrated print heads (IPHs) can utilize a variety of different memorytechnologies. For example, IPHs can use metal fuse memory technology tostore information. However, erasable programmable read only memory(EPROM) provides benefits over the metal fuse technology in that thereis a relatively smaller size requirement for an EPROM selectortransistor, there is no necessity for potentially damaging mechanicalforce in programming EPROM, and it is impossible to recognize statestatus under visual inspection of EPROM.

An IPH platform's ability to implement functions can be limited by theamount of memory it has (e.g., the number of addressable memory unitsthat the memory stores). That is, the more information that can bestored on an IPH, the more features that are able to be implemented onthe IPH. The number of addressable memory units (e.g., bits) for an IPHcan be limited by many factors.

Conventional IPH EPROM addressing is accomplished using directaddressing. Direct addressing utilizes an independent data signal foreach bank of EPROM. As a result, direct addressing requires one register(e.g., shift register) per EPROM bank in order to address the EPROMmemory units of the corresponding EPROM bank.

The amount of silicon (Si) real estate available for a given registerand associated EPROM can be limited by many factors. For example, sizeconstraints imposed by IPH size and/or function can serve to limit theavailable Si real estate. Further, cost constraints associated withmanufacturing a given IPH can limit the amount of available Si realestate available for its register and corresponding EPROM bank. IPH Sireal estate limitations translate to IPH register and EPROM banklimitations, which accordingly translates to addressable memory unitconstraints.

Examples of the present disclosure include a print head memory deviceutilizing a three-dimensional addressing scheme for EPROM along with asystem and a method for three-dimensional addressing for an EPROM memoryunit. The print head memory device, systems, and methods can utilize anumber of shift registers, each connected to a number of EPROM banks, togenerate a three-dimensional EPROM address. The three-dimensional EPROMaddress can include a row select data signal, a column select datasignal, and a bank select data signal. The row select data signal canspecify a row portion of an individual EPROM memory unit address, thecolumn select signal can specify a column portion of the individualEPROM address, and the bank select signal can specify an EPROM bank of anumber of EPROM banks associated with the individual EPROM memory unitaddress specified by the first and second shift registers. As a result,examples of the present disclosure utilizing a three-dimensional EPROMaddress can address EPROM memory units in a greater number of EPROMbanks while utilizing less Si real estate (e.g., fewer shift registerssince each EPROM bank does not require a corresponding shift register toaddress it) than conventional methods.

FIG. 1 illustrates an example of a print head memory device 110according to the present disclosure. The print head memory device 110can be integrated into any IPH design. For example, the print headmemory device 110 can be a portion of an inkjet IPH having the printhead integrated into the ink cartridge. The IPH associated with theprint head memory device 110 can include, for example, a housing, an inkchamber, a number of inlets and outlets in fluid communication with theink chamber, a number of firing resistors, various electrical contacts,and a controller. The controller can include the print head memorydevice 110.

The print head memory device 110 can include a number of shift registers112-1, . . . , 112-N. While three shift registers 112-1, . . . , 112-Nare illustrated in FIG. 1, the invention is not so limited. For example,the number of shift registers 112-1, . . . , 112-N can be any number ofshift registers within constraints of the available Si real estate.

In some examples, each of the number of shift registers 112-1, . . . ,112-N can include a cascade of flip-flop circuits with two stable statessharing a common time clock. Each flip-flop circuit can be connected tothe data input of the next flip-flop in the cascade, resulting in acircuit that shifts a stored bit array by shifting in the data receivedat its input and shifting out the last bit in the array at eachtransition of a clock input. Each flip-flop circuit of a shift registercan be referred to as a stage. The number of shift registers 112-1, . .. , 112-N can include any number of stages. For example, the shiftregisters can include eight stages as depicted in FIG. 1.

The shift registers 112-1, . . . , 112-N can be any type of shiftregister. For example, each of the number of shift registers 112-1, . .. , 112-N can be a serial-in parallel-out shift register.

Shift registers 112-1, . . . , 112-N can accept a number of inputsignals (e.g., select signals S1-1, S4-N, data signals D1, D-N, etc.)via any number of input lines. The select signals S1-1, S4-N can be usedto pre-charge and advance the shift register 112-1, . . . , 112-Nreceiving the select signals S1-1, . . . , S4-N. For example, the shiftregister 112-1 can be advanced by repeatedly pulsing the select signalsS1-1, . . . , S4-1 where each cycle through the four select signalsS1-1, . . . , S4-1 causes the shift register 112-1 to advance by onestage. The select signals S1-1, S4-N can be independent signals or acommon signal. For example, the select signals S1-1, S1-2, S1-N can be acommon signal instead of distinct signals. The same can be true ofselect signals S2-1, S2-2, S2-N, select signals S3-1, S3-2, S3-N, andselect signals S4-1, S4-2, S4-N.

The data signals D1, D-N can serve as initiating signals and cancommunicate the row and column address of an EPROM memory unit. The datainput by signals D1, D-N can be arbitrarily assigned to any of the shiftregisters 112-1, . . . , 112-N such that a particular shift register112-1, . . . , 112-N is not limited to receiving a particular type ofdata input.

Each of the number of shift registers 112-1, . . . , 112-N can beconnected to a number of memory banks 114-1, . . . , 114-N. Any numberof memory banks 114-1, . . . , 114-N is possible. However, the number ofmemory banks 114-1, . . . , 114-N of the print head memory device 110can be limited by the number of shift registers 112-1, . . . , 112-N andthe number of stages and cycles of each of the shift registers 112-1, .. . , 112-N since addressing a number memory banks 114-1, . . . , 114-Nincludes having sufficient shift registers/shift register stages/shiftregister cycles to distinguish between memory units of the number ofmemory banks 114-1, . . . , 114-N.

Each memory bank 114-1, . . . , 114-N can be an array of addressableEPROM memory units (e.g., bits, etc.). The memory bank 114-1, . . . ,114-N can be any size EPROM array with any number of individual EPROMmemory unit addresses. For example, a memory bank 114-1, . . . , 114-Nlogically can be an EPROM array of eight rows by eight columns formingsixty-four individual addressable EPROM memory units. The logicalarrangement and number of addressable bits can be limited by the numberof stages and cycles of each of the shift registers 112-1, . . . , 112-Nsince addressing a number of individual addressable EPROM memory unitsincludes having sufficient shift register stages/shift register cyclesto distinguish between them.

Each shift register 112-1, . . . , 112-N can generate a number ofoutputs (e.g., row select signal (RS) 118, column select signal (CS)120, bank select signal (BS)122). Although FIG. 1 illustrates the RS118, CS 120, and BS 122 signals being generated from separate shiftregisters 112-1, . . . , 112-N, the disclosure is not so limited. Morethan one signal can be generated from an individual shift register ofthe number of shift registers 112-1, . . . , 112-N. For example, if eachof the memory banks 114-1, . . . , 114-N included an EPROM arraylogically comprising eight rows by eight columns forming sixty-fourindividual addressable EPROM memory units and each shift register 112-1,. . . , 112-N was a sixteen-stage shift register 112-1, . . . , 112-N,then a particular shift register (e.g., shift register 112-1) couldgenerate both the RS 118 and CS 120 signals sufficient to address therow and column of an addressable EPROM memory unit of any of the arrayswhen paired with a BS 122 signal. The relationship between the number ofstages of the shift register 112-1, . . . , 112-N and the number ofindividually addressable EPROM memory units can determine how manysignals the particular shift register (e.g., shift register 112-1) cangenerate. So long as the particular shift register (e.g., shift register112-1) includes enough stages to address both the column and the rowportion of a EPROM memory unit address of any of the EPROM arrays of thenumber of memory banks 114-1, . . . , 114-N once paired with the BS 122signal, then that particular shift register (e.g., shift register 112-1)can generate both of the RS 118 and CS 120 signals.

A data signal D1 can be used to generate the RS signal 118. The RSsignal 118 can identify the logical row portion of an address of anindividually addressable EPROM memory unit within any of the EPROMarrays of the memory banks 114-1, . . . , 114-N. The RS signal 118 canbe generated by applying a data signal D1 during a particular cycle of aparticular select signal S1-1, S4-N.

A data signal D2 can be used to generate the CS signal 120. The CSsignal 120 can identify the logical column portion of an address of anindividually addressable EPROM memory unit within any of the EPROMarrays of the memory banks 114-1, . . . , 114-N. The CS signal 120 canbe generated by applying a data signal D2 during a particular cycle of aparticular select signal S1-1, S4-N in a particular shift register112-2.

A data signal D-N can be used to generate the BS signal 122. The BSsignal 122 can identify a particular memory bank of the number of memorybanks 114-1, . . . , 114-N within which the individually addressableEPROM memory unit logically or physically resides. When the BS signal122 is paired with the RS signal 118 and the CS signal 120, athree-dimensional EPROM memory unit address is specified. That is, theRS signal 118 and the CS signal 120 represent a two-dimensional EPROMaddress specifying the logical row (e.g., RS signal 118) and logicalcolumn (e.g., CS 120) that are applicable in addressing an EPROM memoryunit in any of the EPROM memory banks 114-1, . . . , 114-N. The BSsignal 122 introduces a third dimension to the EPROM address thatspecifies which memory bank 114-1, . . . , 114-N the RS signal 118 andthe CS signal 120 are addressed to. In a number of embodiments, the BSsignal 122 can specify a single memory bank of a number of memory banks114-1, . . . , 114-N.

Alternatively, the BS signal 122 can specify more than one of the numberof memory banks 114-1, . . . , 114-N allowing for parallelthree-dimensional EPROM addressing. For example, D-N can be appliedduring multiple cycles of a select signal S1, . . . , S4 to address thespecified row and column of more than one of the number of memory banks114-1, . . . , 114-N in parallel.

The RS signal 118, CS signal 120, and BS signal 122 can be input by acorresponding transistor. For example, the RS signal 118 can be input byan RS transistor, the CS signal 120 by a CS transistor, and the BSsignal 122 by a BS transistor. The RS, CS, and BS transistors can beNMOS transistors. The RS, CS, and BS transistors can be arranged in anymanner that allows for generation of the three-dimensional EPROMaddress. For example, the BS transistor can be connected with the CStransistor and RS transistor in a cascading/series manner. In anotherexample, the BS transistor can be connected to the gate of the CStransistor and RS transistor. In yet another example, the BS transistorcan be connected with the CS transistor and RS transistor through anadditional decoder.

The example print head memory device 110 of FIG. 1 demonstrates athree-dimensional memory addressing scheme that allows fewer shiftregisters 112-1, . . . , 112-N with fewer addressing cycles to addressmany more addressable EPROM memory units than conventional methods. Forexample, utilizing the conventional direct addressing method with foursixteen-stage shift registers only four corresponding memory banks ofeight-by-eight memory unit EPROM memory arrays could be addressed. Thatis, the conventional direct addressing method requires foursixteen-stage shift registers to address 256 memory units. Injuxtaposition with the conventional method, some examples of the presentdisclosure would allow three eight-stage shift registers 112-1, . . . ,112-N to generate three-dimensional EPROM memory unit addresses foreight memory banks 114-1, . . . , 114-N of eight-by-eight memory unitEPROM memory arrays. That is, examples of the present disclosure allowthree eight-stage shift registers 112-1, . . . , 112-N to address 512memory units. The present disclosure can allow for fewer and/or smallershift registers. In the example above, there are three instead of fourshift registers and the three shift registers are eight-stage ratherthan sixteen-stage, saving space both in terms of number and size ofshift registers.

FIG. 2A and FIG. 2B are diagrams of examples of the three-dimensionaladdressing scheme for EPROM. FIG. 2A illustrates a table 230demonstrating an example of the three-dimensional addressing scheme forEPROM of the present disclosure. The table 230 consists of a number ofrows and columns corresponding to signals and the timing of theirapplication, respectively. In table 230, a signal is illustrated asapplied when a “1,” instead of a “0,” appears in the table 230 matrix.

The rows S1, S2, S3, and S4 of table 230 represent select signals S1,S2, S3, and S4 that can be applied to each shift register to prechargeand advance each shift register. In table 230, the select signals S1,S2, S3, and S4 are not necessarily select signals of one shift register.That is, the select signals S1, S2, S3, and S4 can symbolize any selectsignals applied to any of the shift registers which are accepting datasignals. To further clarify, referring back to FIG. 1, S1 of table 230could represent select signals S1-1, S1-2, S1-3, and/or S1-N.Additionally, S2, S3, and S4 of table 230 could represent S2-1, S2-2,S2-3, and/or S2-N; S3-1, S3-2, S3-3, and/or S3-N; and S4-1, S4-2, S4-3,and/or S4-N, respectively. Accordingly, table 230 can illustrate similarselect signals S1, S2, S3, and S4 being applied to precharge and advancea number of distinct shift registers.

Each column of table 230 represents a shift register cycle (e.g., cycle1, cycle 2, cycle 3, cycle 4, cycle 5, cycle 6, cycle 7, cycle 8)wherein cycle 1 is the first cycle to shift in. Since a cycle cancorrespond to the application of select signals S1-S4, each cycle oftable 230 corresponds to four applications of the select signals S1, S2,S3, and S4. Therefore, each cycle corresponds to eight similarlynumbered cycle columns over which the select signals of rows S1, S2, S3,and S4 are applied.

Table 230 further illustrates data signals of rows D1 (RS), D2 (CS), andD3(BS). The data signal of row D1 (RS) can correspond to a data signalD1 specifying a row of a three-dimensional address for EPROM, datasignal of row D2(CS) can correspond to a data signal D2 specifying acolumn of a three-dimensional address for EPROM, and data signal of rowD3(BS) can correspond to a data signal D3 corresponding to a bank of athree-dimensional address for EPROM. As described above, data signal D1,data signal D2, and data signal D3 illustrated in rows D1 (RS), D2 (CS),and D3(BS) can be data signals applied in distinct shift registers.

Read together, table 230 illustrates the timing of the application ofthe aforementioned signals to formulate a three-dimensional address forEPROM (e.g. RS2, CS3, BS1 as output in the address row of table 230).For example, table 230 illustrates that the data signal D1 can beapplied during the seventh cycle of select signal corresponding to S2 ofan eight-stage shift register. Applied at this time, D1 generates arow-select (RS) signal 232 signifying row select two (RS2). Furtherillustrated in table 230, data signal D2 can be applied during the sixthcycle of select signal S2 of a shift register to generate acolumn-select (CS) signal 234 signifying column select three (CS3).Table 230 also illustrates that data signal D3 can be applied during theeighth cycle of select signal S2 of a shift register to generate abank-select (BS) signal 236 signifying bank select one (BS1). Whencombined, the RS, CS, and BS signals specify a three-dimensional addressfor an EPROM memory unit. In the example of FIG. 2A, thethree-dimensional address is RS2, CS3, BS1, addressing the memory unitof the second row of the third column of a first EPROM memory bank.

FIG. 2B illustrates a table 240 demonstrating an example of thethree-dimensional parallel addressing scheme for EPROM of the presentdisclosure. The table 240 consists of a number of rows and columnscorresponding to signals and the timing of their application,respectively. As with table 230, a signal is illustrated as applied whena “1,” instead of a “0,” appears in the table 240 matrix. The rows andcolumns of table 240 illustrate the same basic principles of table 230,except implemented in a parallel addressing scheme. The paralleladdressing scheme of table 240 can be achieved by an additionalapplication of the data signal D3. By applying the data signal D3 anadditional time the RS signal 242 and CS signal 244 are applicable inparallel to the two EPROM banks specified by the two BS signals 246-1and 246-2.

For example, table 240 illustrates the timing of the application of theaforementioned signals to formulate parallel three-dimensional addressesfor EPROM (e.g., RS2, CS3, BS1 and RS2, CS3, BS2 as output in theaddress row of table 240). For example, table 240 illustrates that thedata signal D1 can be applied during the seventh cycle of select signalcorresponding to S2 of an eight-stage shift register. Applied at thistime, D1 generates a row-select (RS) signal 242 signifying row selecttwo (RS2). Further illustrated in table 240, data signal D2 can beapplied during the sixth cycle of select signal S2 of a shift registerto generate a column-select (CS) signal 244 signifying column selectthree (CS3). Table 240 also illustrates that data signal D3 can beduring both the seventh and eighth cycle of select signal S2 of theshift register 240 to generate two BS signals 246-1 and 246-2 signifyingbank select one (BS1) and bank select two (BS2), respectively. Whencombined, the RS, CS, and BS signals specify parallel three-dimensionalmemory unit addresses for EPROM. In the example of FIG. 2B, thethree-dimensional addresses are RS2, CS3, BS1 and RS2, CS3, BS2. RS2,CS3, BS1 is addressing the memory unit of the second row of the thirdcolumn of a first EPROM memory bank. RS2, CS3, BS2 is addressing thememory unit of the second row of the third column of a second EPROMmemory bank. The three-dimensional parallel addressing scheme for EPROMillustrated in table 240 is an inter-bank parallel reading scheme. Thatis, the three-dimensional parallel addressing scheme for EPROMillustrated in table 240 simultaneously addresses a row and a columnamong separate EPROM memory banks. Another alternative (not shown) is anintra-bank parallel addressing scheme. In an intra-bank paralleladdressing scheme, the D1 and/or D2 signal can be applied multiple timesto generate multiple RS and/or CS signals. Therefore, an intra-bankparallel addressing scheme can simultaneously address multiple rowsand/or columns of the same EPROM memory bank.

Examples of the present disclosure can include systems forthree-dimensional addressing for EPROM on a printing device. Such asystem can include a number of EPROM banks. The EPROM banks can belocated on a printing device. For example, they can be located on anintegrated print head. Each of these EPROM banks can be an EPROM memoryarray. The EPROM memory array can be an array of EPROM memory unitsorganized into rows and columns.

The system can include a number of shift registers. The number of shiftregisters can be serial-in parallel-out shift registers. That is, a datastring can be serially input into the shift register, but output inparallel format to multiple outputs. For example, the serially inputdata received via a single physical input (e.g., wire) can be output viamultiple physical outputs (e.g., wires) to simultaneously addressmultiple EPROM banks to which the shift registers are connected.

Each of the shift registers of the system can be synchronized to theircorresponding select signals. That is, the select signals that are inputinto the shift register to precharge the shift register and advance theshift register can comprise a clock pulse determining when each shift ofthe shift register happens. For example, there can be four repeatingselect signals (e.g., S1, S2, S3, and S4) serving as clock pulses. A setof the four select signals can be one clock cycle for the shiftregister. In examples of the present disclosure the shift register canutilize clock cycles in shifting in the data to generate RS, CS, and BSsignals. The number of clock cycles associated with the shift registercan determine the number of EPROM memory banks and the number of EPROMmemory units of each EPROM bank. For example, the number of EPROM memorybanks can be equal to the number of clock cycles associated with a shiftregister generating the BS signal since each clock cycle can correspondto one of the number of EPROM banks. Additionally, the number of rowsand the number of columns of EPROM memory units in each EPROM memoryarray can be equal to the number of clock cycles associated with a shiftregister specifying a CS and/or RS signal since each clock cycle cancorrespond to one of the row and/or column designations of the EPROMmemory array.

The system can include a row select data signal to specify a row portionof the three-dimensional address for EPROM. For example, the row selectdata signal can include an indication of the row of the EPROM memoryunit within an EPROM memory array being addressed by thethree-dimensional address for EPROM. The row select data signal cancorrespond to a first shift register of the number of shift registers.For example, the row select signal can be input into the first shiftregister as a data signal and can specify the row portion of thethree-dimensional address for EPROM based on when the data signal isapplied in relation to a number of select signals.

The system can also include a column select data signal to specify acolumn portion of the three-dimensional address for EPROM. For example,the column select data signal can include an indication of the column ofthe EPROM memory unit within an EPROM memory array being addressed bythe three-dimensional address for EPROM. The column select data signalcan correspond to a second shift register of the number of shiftregisters. For example, the column select signal can be input into thesecond shift register as a data signal and can specify the row portionof the three-dimensional address for EPROM based on when the data signalis applied in relation to a number of select signals.

A bank select data signal specifying an EPROM bank portion of thethree-dimensional address for EPROM can be included in the system. Forexample, the bank select data signal can include an indication of theEPROM bank of the number of EPROM banks to which the column of thecolumn select signal and the row of the row select signal are addressedto. The bank select data signal can correspond to a third shift registerof the number of shift registers. For example, the bank select signalcan be input into the third shift register as a data signal and canspecify the row portion of the three-dimensional address for EPROM basedon when the data signal is applied in relation to a number of selectsignals.

FIG. 3 illustrates a flow chart of an example of a method 370 forthree-dimensional addressing of an EPROM memory unit of an integratedprint head. At 372, the method 370 can include receiving a number ofinput signals at a number of shift registers, wherein the number ofinput signals include a select signal to precharge and advance a shiftregister of the number of shift registers and a data signal. Each of theshift registers can be connected to each EPROM bank of a number of EPROMbanks. For example, each shift register can be in communication witheach EPROM bank of the number of EPROM banks such that it can transmitand/or receive data from each of the EPROM memory banks.

At 374, the method 370 can include generating a row select data signalat a first shift register of the number of shift registers specifying arow portion of a three-dimensional EPROM address.

At 376, the method 370 can include generating a column select datasignal at a second shift register of the number of shift registersspecifying a column portion of the three-dimensional EPROM address.

At 378, the method 370 can include generating a bank select signal at ashift register of the number of shift registers specifying an EPROMbank, of a number of EPROM banks, associated with the row select datasignal and the column select data signal.

At 380, the method 370 can include addressing an individual EPROM memoryunit in three dimensions based on the row select data signal, the columnselect data signal, and the bank select signal. The three-dimensionalEPROM memory unit address can be generated within eight cycles of thenumber of shift registers. For example, the number of shift registerscan generate a row select signal, a column select signal, and a bankselect signal within eight cycles of the shift register receiving thedata signal.

In the detailed description of the present disclosure, reference is madeto the accompanying drawings that form a part hereof, and in which isshown by way of illustration how examples of the disclosure may bepracticed. These examples are described in sufficient detail to enablethose of ordinary skill in the art to practice the examples of thisdisclosure, and it is to be understood that other examples may be usedand the process, electrical, and/or structural changes may be madewithout departing from the scope of the present disclosure.

In addition, the proportion and the relative scale of the elementsprovided in the figures are intended to illustrate the examples of thepresent disclosure, and should not be taken in a limiting sense. As usedherein, the designators “N”, particularly with respect to referencenumerals in the drawings, indicate that a number of the particularfeature so designated can be included with a number of examples of thepresent disclosure. As used herein, “a” or “a number of” something canrefer to one or more such things.

What is claimed:
 1. A print head memory device, comprising: a number oferasable programmable read only memory (EPROM) banks, each comprising anEPROM memory array, on an integrated print head; and a number of shiftregisters, each connected to the number of EPROM banks, to generate athree-dimensional EPROM address comprising: a row select data signalspecifying a row portion of the three-dimensional EPROM address, acolumn select data signal specifying a column portion of thethree-dimensional EPROM address, and a bank select data signalspecifying an EPROM bank of the number of EPROM banks associated withthe row select data signal and the column select data signal.
 2. Thedevice of claim 1, wherein the bank select data signal specifies morethan one of the number of EPROM banks associated with the row selectdata and the column select data, to generate a parallelthree-dimensional EPROM address.
 3. The device of claim 1, wherein therow select data signal is generated by a first shift register of thenumber of shift registers, the column select data signal is generated bythe first shift register of a number of shift registers, and the bankselect data signal is generated by a second shift register of the numberof shift registers.
 4. The device of claim 1, wherein the row selectdata signal is generated by a first shift register of the number ofshift registers, the column select data signal is generated by a secondshift register of a number of shift registers, and the bank select datasignal is generated by a third shift register of the number of shiftregisters.
 5. The device of claim 4, wherein each of the number of shiftregisters accepts a number of inputs including a corresponding datasignal and a number of corresponding select signals.
 6. The device ofclaim 5, wherein the corresponding data signal initiates a correspondingshift register and specifies the row portion and the column portion ofthe three-dimensional EPROM address.
 7. The device of claim 5, whereinthe corresponding select signals precharge and advance a correspondingshift register.
 8. The device of claim 7, wherein the correspondingshift register is advanced by one stage upon cycling through four of thecorresponding select signals.
 9. A system, comprising: a number oferasable programmable read only memory (EPROM) banks, each comprising anEPROM memory array, on a printing device; a number of shift registershaving a serial data input and a number of parallel outputs, whereineach of the number of shift registers are connected to the number ofEPROM banks; a row select data signal, corresponding to a first shiftregister of the number of shift registers, to specify a row portion of athree-dimensional EPROM address; a column select data signal,corresponding to a second shift register of the number of shiftregisters, to specify a column portion of the three-dimensional EPROMaddress; and a bank select data signal, corresponding to a third shiftregister of the number of shift registers, to specify an EPROM bank, ofthe number of EPROM banks, portion of the three-dimensional EPROMaddress.
 10. The system of claim 9, wherein each of the number of shiftregisters is synchronized to a corresponding set of four repeatingselect signals that cumulatively represent a clock cycle of a number ofclock cycles associated with a corresponding shift register.
 11. Thesystem of claim 10, wherein the number of erasable programmable readonly memory (EPROM) banks is determined by the number of clock cyclesassociated with a corresponding shift register.
 12. The system of claim10, wherein a number of row and a number of columns of memory units ofthe EPROM array of each of the number of EPROM banks is determined bythe number of clock cycles associated with a corresponding shiftregister.
 13. A method for three-dimensional addressing of an erasableprogrammable read only memory (EPROM) memory unit of an integrated printhead, comprising: receiving a number of input signals at a number ofshift registers, wherein the number of input signals include a selectsignal to precharge and advance a shift register of the number of shiftregisters and a data signal; generating a row select data signal at afirst shift register of the number of shift registers specifying a rowportion of a three-dimensional EPROM address; generating a column selectdata signal at a second shift register of the number of shift registersspecifying a column portion of the three-dimensional EPROM address;generating a bank select signal at a shift register of the number ofshift registers specifying an EPROM bank, of a number of EPROM banks,associated with the row select data signal and the column select datasignal; and addressing an individual EPROM memory unit in threedimensions based on the row select data signal, the column select datasignal, and the bank select signal.
 14. The method of claim 13, whereineach shift register of the number of shift registers is connected toeach EPROM bank of the number of EPROM banks.
 15. The method of claim14, wherein the method includes generating one three-dimensional EPROMaddress with eight cycles of the number of shift registers.